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Cover Image for Novel GaN-based vertical heterostructure field effect transistor structures using crystallographic KOH etching and overgrowth

Novel GaN-based vertical heterostructure field effect transistor structures using crystallographic KOH etching and overgrowth

H Qian, KB Lee, SH Vajargah, SV Novikov, I Guiney, ZH Zaidi, S Jiang, DJ Wallis, CT Foxon, CJ Humphreys, PA Houston

May 02, 2017

A1. Wet etching A1. Semi-polar (11-22) GaN A3. Molecular beam epitaxy A3. Metalorganic chemical vapour deposition B1. AlGaN/GaN B3. Vertical Heterostructure Field E ff ect Transisto (VHFET)

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