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A systematic comparison of polar and semipolar Si-doped AlGaN alloys with high AlN content
Abstract: With a view to supporting the development of ultra-violet light-emitting diodes and related devices, the compositional, emission and morphology properties of Si-doped n-type Al x Ga1-x N alloys are extensively...
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A systematic comparison of polar and semipolar Si-doped AlGaN alloys with high AlN content
Abstract With a view to supporting the development of ultra-violet light-emitting diodes and related devices, the compositional, emission and morphology properties of Si-doped...
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Quantum analysis of second-order effects in superconducting travelling-wave parametric amplifiers
Abstract: We have performed a quantum mechanical analysis of travelling-wave parametric amplifiers (TWPAs) in order to investigate five experimental phenomena related to their operations, namely the effect of impedance mismatch...
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