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Origin of faceted surface hillocks on semi-polar (1 1 2 ¯ 2) GaN templates grown on pre-structured sapphire
Y Han
,
M Caliebe
,
M Kappers
,
F Scholz
,
M Pristovsek
,
C Humphreys
Mar 24, 2015
Characterization
DEFECTS
Hydride vapor phase epitaxy
Metalorganic vapor phase epitaxy
Nitrides
Semiconducting III-V materials
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