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Combined SEM-CL and STEM investigation of green InGaN quantum wells
Abstract: The microstructure of green-emitting InGaN/GaN quantum well (QW) samples grown at different temperatures was studied using cross-section scanning transmission electron microscopy (STEM) and plan-view...
Combined SEM-CL and STEM investigation of green InGaN quantum wells
Abstract: The microstructure of green-emitting InGaN/GaN quantum well (QW) samples grown at different temperatures was studied using cross-section scanning transmission electron microscopy (STEM) and plan-view...
Effect of Si-doped InGaN underlayers on photoluminescence efficiency and recombination dynamics in InGaN/GaN quantum wells
S A Church, G M Christian, R M Barrett, S Hammersley, M J Kappers, M Frentrup, R A Oliver, D J Binks
Sep 10, 2021
Abstract: A series of single InGaN/GaN quantum wells (QWs) with a Si-doped InGaN underlayer were studied to investigate the impact of the underlayer on photoluminescence efficiency and recombination dynamics. The thickness of...
Effect of Si-doped InGaN underlayers on photoluminescence efficiency and recombination dynamics in InGaN/GaN quantum wells
S A Church, G M Christian, R M Barrett, S Hammersley, M J Kappers, M Frentrup, R A Oliver, D J Binks
Sep 10, 2021
Abstract: A series of single InGaN/GaN quantum wells (QWs) with a Si-doped InGaN underlayer were studied to investigate the impact of the underlayer on photoluminescence efficiency and recombination dynamics. The thickness of...
Combined SEM-CL and STEM investigation of green InGaN quantum wells
Abstract
The microstructure of green-emitting InGaN/GaN quantum well (QW) samples grown at different temperatures was studied using cross-section scanning transmission electron...