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Results: 1
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X-ray reflectivity method for the characterization of InGaN/GaN quantum well interface
F Massabuau
,
N Piot
,
M Frentrup
,
X Wang
,
Q Avenas
,
M Kappers
,
C Humphreys
,
R Oliver
Mar 09, 2017
III-nitride semiconductors
GAN
InGaN
Interfaces
Quantum wells
X-ray reflectivity
Published by:
