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The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures
S Hammersley, D Watson-Parris, P Dawson, MJ Godfrey, TJ Badcock, MJ Kappers, C McAleese, RA Oliver, CJ Humphreys
May 17, 2012
There is a great deal of interest in the underlying causes of efficiency droop in
InGaN/GaN quantum well light emitting diodes, with several physical mechanisms
being put forward to explain the phenomenon. In this paper we...