Search
Results: 14
An RF Approach to Modelling Gallium Nitride Power Devices Using Parasitic Extraction
This paper begins with a comprehensive review into the existing GaN device models. Secondly, it identifies the need for a more accurate GaN switching model. A simple practical process based on radio frequency techniques...
Sequential plan-view imaging of sub-surface structures in the transmission electron microscope
Transmission electron microscopy (TEM) is a central technique for the characterisation of materials at the atomic scale. However, it requires the sample to be thin enough to be electron transparent, imposing strict limitations...
The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem
CJ Humphreys, JT Griffiths, F Tang, F Oehler, SD Findlay, C Zheng, J Etheridge, TL Martin, PAJ Bagot, MP Moody, D Sutherland, P Dawson, S Schulz, S Zhang, WY Fu, T Zhu, MJ Kappers, RA Oliver
Apr 21, 2017
Oxidation of GaN
GaN is a wide-band-gap semiconductor used in high-efficiency light-emitting diodes and solar cells. The solid is produced industrially at high chemical purities by deposition from a vapor phase, and oxygen may be included at...
Combined SEM-CL and STEM investigation of green InGaN quantum wells
Abstract: The microstructure of green-emitting InGaN/GaN quantum well (QW) samples grown at different temperatures was studied using cross-section scanning transmission electron microscopy (STEM) and plan-view...
Combined SEM-CL and STEM investigation of green InGaN quantum wells
Abstract: The microstructure of green-emitting InGaN/GaN quantum well (QW) samples grown at different temperatures was studied using cross-section scanning transmission electron microscopy (STEM) and plan-view...
Combined SEM-CL and STEM investigation of green InGaN quantum wells
Abstract
The microstructure of green-emitting InGaN/GaN quantum well (QW) samples grown at different temperatures was studied using cross-section scanning transmission electron...
Oxidation of GaN
GaN is a wide-band-gap semiconductor used in high-efficiency light-emitting diodes and solar cells. The solid is produced industrially at high chemical purities by deposition from a vapor phase, and oxygen may be included at...
Young's modulus, Poisson's ratio, and residual stress and strain in (111)-oriented scandium nitride thin films on silicon
Epitaxial scandium nitride films (225 nm thick) were grown on silicon by molecular beam epitaxy, using ammonia as a reactive nitrogen source. The main crystallographic orientation of ScN with respect to Si is (111)(ScN)parallel...