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Photo-Induced Bandgap Renormalization Governs the Ultrafast Response of Single-Layer MoS2.
Eva AA Pogna, Margherita Marsili, Domenico de Fazio, Stefano Dal Conte, Cristian Manzoni, Davide Sangalli, Duhee Yoon, Antonio Lombardo, Andrea C Ferrari, Andrea Marini, Giulio Cerullo, Deborah Prezzi
Sep 05, 2018
Transition metal dichalcogenides (TMDs) are emerging as promising two-dimensional (2D) semiconductors for optoelectronic and flexible devices. However, a microscopic explanation of their photophysics, of pivotal importance for...
Rational Passivation of Sulfur Vacancy Defects in Two-Dimensional Transition Metal Dichalcogenides.
Hope Bretscher, Zhaojun Li, James Xiao, Diana Yuan Qiu, Sivan Refaely-Abramson, Jack A Alexander-Webber, Arelo Tanoh, Ye Fan, Géraud Delport, Cyan A Williams, Samuel D Stranks, Stephan Hofmann, Jeffrey B Neaton, Steven G Louie, Akshay Rao
May 10, 2021
Structural defects vary the optoelectronic properties of monolayer transition metal dichalcogenides, leading to concerted efforts to control defect type and density via materials growth or postgrowth passivation. Here, we...
Rational Passivation of Sulfur Vacancy Defects in Two-Dimensional Transition Metal Dichalcogenides.
Hope Bretscher, Zhaojun Li, James Xiao, Diana Yuan Qiu, Sivan Refaely-Abramson, Jack A Alexander-Webber, Arelo Tanoh, Ye Fan, Géraud Delport, Cyan A Williams, Samuel D Stranks, Stephan Hofmann, Jeffrey B Neaton, Steven G Louie, Akshay Rao
Jun 13, 2021
Structural defects vary the optoelectronic properties of monolayer transition metal dichalcogenides, leading to concerted efforts to control defect type and density via materials growth or postgrowth passivation. Here, we...
Published by: ACS nano