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Effect of Si-doped InGaN underlayers on photoluminescence efficiency and recombination dynamics in InGaN/GaN quantum wells
S A Church, G M Christian, R M Barrett, S Hammersley, M J Kappers, M Frentrup, R A Oliver, D J Binks
Sep 10, 2021
Abstract: A series of single InGaN/GaN quantum wells (QWs) with a Si-doped InGaN underlayer were studied to investigate the impact of the underlayer on photoluminescence efficiency and recombination dynamics. The thickness of...
Effect of Si-doped InGaN underlayers on photoluminescence efficiency and recombination dynamics in InGaN/GaN quantum wells
S A Church, G M Christian, R M Barrett, S Hammersley, M J Kappers, M Frentrup, R A Oliver, D J Binks
Sep 10, 2021
Abstract: A series of single InGaN/GaN quantum wells (QWs) with a Si-doped InGaN underlayer were studied to investigate the impact of the underlayer on photoluminescence efficiency and recombination dynamics. The thickness of...