Crystalline Interlayers for Reducing the Effective Thermal Boundary Resistance in GaN-on-Diamond.
Daniel E Field,
Jerome A Cuenca,
Matthew Smith,
Simon M Fairclough,
Fabien C-P Massabuau,
James W Pomeroy,
Oliver Williams,
Rachel A Oliver,
Iain Thayne,
Martin Kuball
Nov 25, 2020
Integrating diamond with GaN high electron mobility transistors (HEMTs) improves thermal management, ultimately increasing the reliability and performance of high-power high-frequency radio frequency amplifiers. Conventionally...