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Electron and hole mobilities at a Si/SiO<sub>2</sub> interface with giant valley splitting
We examine the electron mobility and hole mobility at the Si/buried oxide (BOX) interface at which the valley splitting of the electron system is strongly enhanced, and compare the values observed to those at a standard...
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Electron and hole mobilities at a Si/SiO<sub>2</sub> interface with giant valley splitting
We examine the electron mobility and hole mobility at the Si/buried oxide (BOX) interface at which the valley splitting of the electron system is strongly enhanced, and compare the values observed to those at a standard...
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Defects in TiO 2 films on p +-Si studied by positron annihilation spectroscopy
Variable-energy positron annihilation spectroscopy has been applied to the study of defects in TiO 2/p +-Si structures, in the as-grown state and after annealing in vacuum and in hydrogen, to investigate whether annealing (and...
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Ge/Si and Ge Isotope Fractionation During Glacial and Non-glacial Weathering
Glacial environments offer the opportunity to study the incipient stages of chemical weathering due to the high availability of finely ground sediments, low water temperatures, and typically short rock-water interaction...
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Exploration of the Semantic Difference between the Two Negative Markers lw- and (-)si(-) in Swahili
When dealing with negation, grammars of Standard Swahili generally present three basic negative markers, ha-, (-)si(-), and -to-. For two of these three markers, ha- and -si-, grammars describe their distribution, but...
Probing the formation of silicon nano-crystals (Si-ncs) using variable energy positron annihilation spectroscopy
We describe preliminary results from studies of the formation of silicon nano-crystals (Si-ncs) embedded in stoichiometric, thermally grown SiO 2 using Variable Energy Positron Annihilation Spectroscopy (VEPAS). We show that the...
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Probing the formation of silicon nano-crystals (Si-ncs) using variable energy positron annihilation spectroscopy
We describe preliminary results from studies of the formation of silicon nano-crystals (Si-ncs) embedded in stoichiometric, thermally grown SiO 2 using Variable Energy Positron Annihilation Spectroscopy (VEPAS). We show that the...
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Exploration of the Semantic Difference between the Two Negative Markers lw- and (-)si(-) in Swahili
Christa Beaudoin-Lietz
Sep 05, 2013
When dealing with negation, grammars of Standard Swahili generally present three basic negative markers, ha-, (-)si(-), and -to-. For two of these three markers, ha- and -si-, grammars describe their distribution, but...
Face Dependence of Schottky Barriers Heights of Silicides and Germanides on Si and Ge.
Density functional supercell calculations of the Schottky barrier heights (SBH) of metal germanides and silicides on Si or Ge find that these vary with the facet, unlike those of elemental metals. In addition, silicides and...
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Surface Crystallization of Liquid Au-Si and Its Impact on Catalysis.
In situ transmission electron microscopy reveals that an atomically thin crystalline phase at the surface of liquid Au-Si is stable over an unexpectedly wide range of conditions. By measuring the surface structure as a function...
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Defects in TiO 2 films on p +-Si studied by positron annihilation spectroscopy
Variable-energy positron annihilation spectroscopy has been applied to the study of defects in TiO 2/p +-Si structures, in the as-grown state and after annealing in vacuum and in hydrogen, to investigate whether annealing (and...
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Metallic Glass Films with Nanostructured Periodic Density Fluctuations Supported on Si/SiO2 as an Efficient Hydrogen Sorber.
Nanostructured metallic glass films (NMGF) can exhibit surface and intrinsic effects that give rise to unique physical and chemical properties. Here, a facile synthesis and electrochemical, structural, and morphologic...
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Growth and Characterisation Studies of Eu3O4 Thin Films Grown on Si/SiO2 and Graphene.
We report the growth, structural and magnetic properties of the less studied Eu-oxide phase, Eu3O4, thin films grown on a Si/SiO2 substrate and Si/SiO2/graphene using molecular beam epitaxy. The X-ray diffraction scans show that...
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Preparation, characterization, and in vitro evaluation of nanostructured chitosan/apatite and chitosan/Si-doped apatite composites
Chitosan/apatite composites are attracting great attention as biomaterials for bone repair and regeneration procedures. The reason is their unique set of properties: bioactivity and osteoconductivity provided by apatite and...
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A systematic comparison of polar and semipolar Si-doped AlGaN alloys with high AlN content
Abstract: With a view to supporting the development of ultra-violet light-emitting diodes and related devices, the compositional, emission and morphology properties of Si-doped n-type Al x Ga1-x N alloys are extensively...
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Substantiation of buried two dimensional hole gas (2DHG) existence in GaN-on-Si epitaxial heterostructure
Gallium Nitride on Silicon (GaN-on-Si) devices feature a relatively thick epi buffer layer to release the stress related to the lattice constant mismatch between GaN and Si. The buffer layer is formed by several AlGaN-based...
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Growth and Characterisation Studies of Eu 3 O 4 Thin Films Grown on Si/SiO 2 and Graphene
We report the growth, structural and magnetic properties of the less studied Eu-oxide phase, Eu3O4, thin films grown on a Si/SiO2 substrate and Si/SiO2/graphene using molecular beam epitaxy. The X-ray diffraction scans show that...
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Growth and Characterisation Studies of Eu<sub>3</sub>O<sub>4</sub> Thin Films Grown on Si/SiO<sub>2</sub> and Graphene.
We report the growth, structural and magnetic properties of the less studied Eu-oxide phase, Eu3O4, thin films grown on a Si/SiO2 substrate and Si/SiO2/graphene using molecular beam epitaxy. The X-ray diffraction scans show that...
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Positron annihilation studies of fluorine-vacancy complexes in Si and SiGe
The formation of fluorine-vacancy (FV) complexes in strained Si-SiGe-Si multilayer structures and relaxed SiGe layers of varying Ge content has been investigated using variable-energy positron annihilation spectroscopy...
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Concerted thermal-plus-electronic nonlocal desorption of chlorobenzene from Si(111)-7 × 7 in the STM

The rate of desorption of chemisorbed chlorobenzene molecules from the Si(111)-7 × 7 surface, induced by nonlocal charge injection from an STM tip, depends on the surface temperature. Between 260 and 313 K, we find an...

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