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Reduced Graphene Oxide as a Monolithic Multifunctional Conductive Binder for Activated Carbon Supercapacitors.
Using reduced graphene oxide (r-GO) as a multifunctional conductive binder, a simple, cost-effective, and environmentally friendly approach is developed to fabricate activated carbon/reduced graphene oxide (AC/r-GO) composite...
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Imaging of Optically Active Defects with Nanometer Resolution.
Point defects significantly influence the optical and electrical properties of solid-state materials due to their interactions with charge carriers, which reduce the band-to-band optical transition energy. There has been a...
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Empirical Parameter to Compare Molecule-Electrode Interfaces in Large-Area Molecular Junctions.
This paper describes a simple model for comparing the degree of electronic coupling between molecules and electrodes across different large-area molecular junctions. The resulting coupling parameter can be obtained directly from...
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Putting High-Index Cu on the Map for High-Yield, Dry-Transferred CVD Graphene.
Reliable, clean transfer and interfacing of 2D material layers are technologically as important as their growth. Bringing both together remains a challenge due to the vast, interconnected parameter space. We introduce a...
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Growth and Characterisation Studies of Eu<sub>3</sub>O<sub>4</sub> Thin Films Grown on Si/SiO<sub>2</sub> and Graphene.
We report the growth, structural and magnetic properties of the less studied Eu-oxide phase, Eu3O4, thin films grown on a Si/SiO2 substrate and Si/SiO2/graphene using molecular beam epitaxy. The X-ray diffraction scans show that...
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Putting High-Index Cu on the Map for High-Yield, Dry-Transferred CVD Graphene.
Reliable, clean transfer and interfacing of 2D material layers are technologically as important as their growth. Bringing both together remains a challenge due to the vast, interconnected parameter space. We introduce a...
Published by:
Growth and Characterisation Studies of Eu3O4 Thin Films Grown on Si/SiO2 and Graphene.
We report the growth, structural and magnetic properties of the less studied Eu-oxide phase, Eu3O4, thin films grown on a Si/SiO2 substrate and Si/SiO2/graphene using molecular beam epitaxy. The X-ray diffraction scans show that...
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Introducing Overlapping Grain Boundaries in Chemical Vapor Deposited Hexagonal Boron Nitride Monolayer Films.
We demonstrate the growth of overlapping grain boundaries in continuous, polycrystalline hexagonal boron nitride (h-BN) monolayer films via scalable catalytic chemical vapor deposition. Unlike the commonly reported atomically...
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Crystal Orientation Dependent Oxidation Modes at the Buried Graphene-Cu Interface.
We combine spatially resolved scanning photoelectron spectroscopy with confocal Raman and optical microscopy to reveal how the oxidation of the buried graphene-Cu interface relates to the Cu crystallographic orientation. We...
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Giant photoluminescence enhancement in MoSe2 monolayers treated with oleic acid ligands.
The inherently low photoluminescence (PL) yields in the as prepared transition metal dichalcogenide (TMD) monolayers are broadly accepted to be the result of atomic vacancies (i.e., defects) and uncontrolled doping, which give...
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Growth and Characterisation Studies of Eu 3 O 4 Thin Films Grown on Si/SiO 2 and Graphene
We report the growth, structural and magnetic properties of the less studied Eu-oxide phase, Eu3O4, thin films grown on a Si/SiO2 substrate and Si/SiO2/graphene using molecular beam epitaxy. The X-ray diffraction scans show that...
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