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Evaluation of growth methods for the heteroepitaxy of non-polar (1120) GAN on sapphire by MOVPE

F Oehler, D Sutherland, T Zhu, R Emery, TJ Badcock, MJ Kappers, CJ Humphreys, P Dawson, RA Oliver

OAI: oai:www.repository.cam.ac.uk:1810/245893

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Abstract

DEFECTS Characterization Metalorganic vapor phase epitaxy Nitrides