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Comparative study of polar and semipolar (1122) InGaN layers grown by metalorganic vapour phase epitaxy
DV Dinh
,
F Oehler
,
VZ Zubialevich
,
MJ Kappers
,
SN Alam
,
M Caliebe
,
F Scholtz
,
CJ Humphreys
,
PJ Parbrook
OAI: oai:www.repository.cam.ac.uk:1810/246211
Published by:
Abstract
Indium Gallium Nitride
MOVPE
Semipolar
ANISOTROPY
Photoluminescence