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Engineering of Grain Boundaries in CeO<inf>2</inf> Enabling Tailorable Resistive Switching Properties

H Dou, M Hellenbrand, M Xiao, Z Hu, S Kunwar, A Chen, JL MacManus-Driscoll, Q Jia, H Wang

OAI: oai:www.repository.cam.ac.uk:1810/347312 • DOI: 10.17863/CAM.94727

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Abstract

cerium oxide defect engineering Grain boundary memristors resistive switching