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Optoelectronic mixing with high-frequency graphene transistors.
A Montanaro, W Wei, D De Fazio, U Sassi, G Soavi, P Aversa, AC Ferrari, H Happy, P Legagneux, E Pallecchi
OAI: oai:www.repository.cam.ac.uk:1810/324049 • DOI: 10.17863/CAM.71509
Abstract
Graphene is ideally suited for optoelectronics. It offers absorption at telecom wavelengths, high-frequency operation and CMOS-compatibility. We show how high speed optoelectronic mixing can be achieved with high frequency (~20 GHz bandwidth) graphene field effect transistors (GFETs). These devices mix an electrical signal injected into the GFET gate and a modulated optical signal onto a single layer graphene (SLG) channel. The photodetection mechanism and the resulting photocurrent sign depend on the SLG Fermi level (EF). At low EF (<130 meV), a positive photocurrent is generated, while at large EF (>130 meV), a negative photobolometric current appears. This allows our devices to operate up to at least 67 GHz. Our results pave the way for GFETs optoelectronic mixers for mm-wave applications, such as telecommunications and radio/light detection and ranging (RADAR/LIDARs.).