Nanoimprint lithography resist profile inversion for lift-off applications

Philip A Shields, Duncan W E Allsopp

OAI: oai:purehost.bath.ac.uk:openaire_cris_publications/b6c68614-873c-41a5-bf56-a213de66ee8b • DOI: https://doi.org/10.1016/j.mee.2011.04.063

A method is described in which the tapered features that are inherent to nanoimprint lithography are inverted to allow successful lift-off. A mold of the relief is created by in-filling the imprinted resist with hydrogen silsesquioxane (HSQ) before selectively removing the resist with O2 plasma. Nanoscale etch masks have been created by lift-off from the negative HSQ profile and used to create high-aspect-ratio structures in materials that are hard to plasma etch.