Lead-Free Perovskite Semiconductors Based on Germanium-Tin Solid Solutions

Satyawan Nagane, Dibyajyoti Ghosh, Robert L.Z. Hoye, Baodan Zhao, Shahab Ahmad, Alison B. Walker, M. Saiful Islam, Satishchandra Ogale, Aditya Sadhanala

OAI: oai:purehost.bath.ac.uk:openaire_cris_publications/fcc854ea-a864-4a2a-996c-744c668991f2 • DOI: https://doi.org/10.1021/acs.jpcc.8b00480

Solar cells and optoelectronics based on lead halide perovskites are generating considerable interest but face challenges with the use of toxic lead. In this study, we fabricate and characterize lead-free perovskites based on germanium and tin solid solutions, CH₃NH₃Sn_(1-x)Ge_xI₃ (0 ≤ x ≤ 1). We show that these perovskite compounds possess band gaps from 1.3 to 2.0 eV, which are suitable for a range of optoelectronic applications, from single junction devices and top cells for tandems to light-emitting layers. Their thermodynamic stability and electronic properties are calculated for all compositions and agree well with our experimental measurements. Our findings demonstrate an attractive family of lead-free perovskite semiconductors with a favorable band-gap range for efficient single-junction solar cells.

/dk/atira/pure/subjectarea/asjc/2500/2504 name=Electronic, Optical and Magnetic Materials /dk/atira/pure/subjectarea/asjc/2100/2100 name=General Energy /dk/atira/pure/subjectarea/asjc/1600/1606 name=Physical and Theoretical Chemistry /dk/atira/pure/subjectarea/asjc/2500/2508 name=Surfaces, Coatings and Films