Precursors for p-Type Nickel Oxide

Andrew Johnson, Stephen Richards, Troy D. Manning, Michael Hill, Kieran Molloy

OAI: oai:purehost.bath.ac.uk:publications/604f66f1-aad3-4132-b945-db78a8196d5c • DOI: https://doi.org/10.1002/ejic.201601419

A series of unsymmetrical nickel beta-diketonate derivatives have been synthesised and structurally characterised for application as atmospheric-pressure metal-organic chemical vapour deposition (AP-MOCVD) precursors for nickel oxide.TMEDA)Ni[MeC(O) CHC(O) OEt](2) (TMEDA = tetramethylethylenediamine) was selected and used to deposit NiO films of varying thickness onto commercial indium tin oxide (ITO)-coated glass; the work function of the ITO was raised as a consequence.

chemical vapor deposition thin films Semiconductors Nickel Precursors