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Cover Image for Origin of faceted surface hillocks on semi-polar (1 1 2 ¯ 2) GaN templates grown on pre-structured sapphire

Origin of faceted surface hillocks on semi-polar (1 1 2 ¯ 2) GaN templates grown on pre-structured sapphire

Y Han, M Caliebe, M Kappers, F Scholz, M Pristovsek, C Humphreys

Mar 24, 2015

Characterization DEFECTS Hydride vapor phase epitaxy Metalorganic vapor phase epitaxy Nitrides Semiconducting III-V materials

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Cover Image for Evaluation of growth methods for the heteroepitaxy of non-polar (1120) GAN on sapphire by MOVPE

Evaluation of growth methods for the heteroepitaxy of non-polar (1120) GAN on sapphire by MOVPE

F Oehler, D Sutherland, T Zhu, R Emery, TJ Badcock, MJ Kappers, CJ Humphreys, P Dawson, RA Oliver

Sep 10, 2014

DEFECTS Characterization Metalorganic vapor phase epitaxy Nitrides

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