Search
Results: 42
Cathodoluminescence studies of GaN coalesced from nanopyramids selectively grown by MOVPE
Coalescence of GaN over arrays of GaN nanopyramids has important device applications and has been achieved on nano-imprint lithographically patterned GaN/sapphire substrates using metal organic vapour phase epitaxy. Spatially...
Cathodoluminescence studies of GaN coalesced from nanopyramids selectively grown by MOVPE
Coalescence of GaN over arrays of GaN nanopyramids has important device applications and has been achieved on nano-imprint lithographically patterned GaN/sapphire substrates using metal organic vapour phase epitaxy. Spatially...
Strong photonic crystal behavior in regular arrays of core-shell and quantum disc InGaN/GaN nanorod light-emitting diodes
C.J. Lewins, E.D. Le Boulbar, S.M. Lis, P.R. Edwards, R.W. Martin, P.A. Shields, D.W.E. Allsopp
Jul 31, 2014
We show that arrays of emissive nanorod structures can exhibit strong photonic crystal behavior, via observations of the far-field luminescence from core-shell and quantum disc InGaN/GaN nanorods. The conditions needed for the...
Strong photonic crystal behavior in regular arrays of core-shell and quantum disc InGaN/GaN nanorod light-emitting diodes
C.J. Lewins, E.D. Le Boulbar, S.M. Lis, P.R. Edwards, R.W. Martin, P.A. Shields, D.W.E. Allsopp
Jul 31, 2014
We show that arrays of emissive nanorod structures can exhibit strong photonic crystal behavior, via observations of the far-field luminescence from core-shell and quantum disc InGaN/GaN nanorods. The conditions needed for the...
The impact of trench defects in InGaN/GaN light emitting diodes and implications for the "green gap" problem
F.C.-P. Massabuau, M.J. Davies, F. Oehler, S.K. Pamenter, E.J. Thrush, M.J. Kappers, A. Kovács, T. Williams, M.A. Hopkins, C.J. Humphreys, P. Dawson, R.E. Dunin-Borkowski, J. Etheridge, D.W.E. Allsopp, R.A. Oliver
Sep 15, 2014
The impact of trench defects in blue InGaN/GaN light emitting diodes (LEDs) has been investigated. Two mechanisms responsible for the structural degradation of the multiple quantum well (MQW) active region were identified. It...
The impact of trench defects in InGaN/GaN light emitting diodes and implications for the "green gap" problem
F.C.-P. Massabuau, M.J. Davies, F. Oehler, S.K. Pamenter, E.J. Thrush, M.J. Kappers, A. Kovács, T. Williams, M.A. Hopkins, C.J. Humphreys, P. Dawson, R.E. Dunin-Borkowski, J. Etheridge, D.W.E. Allsopp, R.A. Oliver
Sep 15, 2014
The impact of trench defects in blue InGaN/GaN light emitting diodes (LEDs) has been investigated. Two mechanisms responsible for the structural degradation of the multiple quantum well (MQW) active region were identified. It...
Strong-field terahertz optical sideband generation for wavelength conversion in asymmetric double quantum wells
Terahertz (THz) optical sideband generation in asymmetric double quantum wells in strong THz fields is studied theoretically. Both monotonic THz-power dependence and saturation of the first-order sideband intensity can occur...
Nanoimprint lithography resist profile inversion for lift-off applications
A method is described in which the tapered features that are inherent to nanoimprint lithography are inverted to allow successful lift-off. A mold of the relief is created by in-filling the imprinted resist with hydrogen...
Enhanced light extraction by photonic quasi-crystals in GaN blue LEDs
Philip A. Shields, Martin D. B. Charlton, Tom Lee, Majd E. Zoorob, Duncan W. E. Allsopp, Wang Nang Wang
Jul 01, 2009
The far-field profile of photonic quasi-crystal patterned and unpatterned LEDs, fabricated from commercial epitaxial substrates by electron beam lithography, has been measured prior to lapping and dicing. Emission enhancements...
Nanoimprint lithography resist profile inversion for lift-off applications
A method is described in which the tapered features that are inherent to nanoimprint lithography are inverted to allow successful lift-off. A mold of the relief is created by in-filling the imprinted resist with hydrogen...
Strong-field terahertz optical sideband generation for wavelength conversion in asymmetric double quantum wells
Terahertz (THz) optical sideband generation in asymmetric double quantum wells in strong THz fields is studied theoretically. Both monotonic THz-power dependence and saturation of the first-order sideband intensity can occur...
Factors influencing surface morphology of anodized TiO 2 nanotubes
Domenico Regonini, A Satka, A Jaroenworaluck, Duncan W E Allsopp, Christopher R Bowen, R Stevens
Jan 01, 0001
This paper investigates the formation mechanism of ribs on the outer wall of anodized TiO 2 nanotubes (NTs) prepared in a NaF/Glycerol electrolyte containing 2 wt% of water. The effect of potential and time on the morphology of...
Factors influencing surface morphology of anodized TiO 2 nanotubes
Domenico Regonini, A Satka, A Jaroenworaluck, Duncan W E Allsopp, Christopher R Bowen, R Stevens
Jan 01, 0001
This paper investigates the formation mechanism of ribs on the outer wall of anodized TiO 2 nanotubes (NTs) prepared in a NaF/Glycerol electrolyte containing 2 wt% of water. The effect of potential and time on the morphology of...
Influence of stress on optical transitions in GaN nanorods containing a single InGaN/GaN quantum disk
Y. D. Zhuang, J. Bruckbauer, P. A. Shields, P. R. Edwards, R. W. Martin, D. W. E. Allsopp
Nov 07, 2014
Cathodoluminescence (CL) hyperspectral imaging has been performed on GaN nanorods containing a single InGaN quantum disk (SQD) with controlled variations in excitation conditions. Two different nanorod diameters (200 and 280...
Influence of stress on optical transitions in GaN nanorods containing a single InGaN/GaN quantum disk
Y. D. Zhuang, J. Bruckbauer, P. A. Shields, P. R. Edwards, R. W. Martin, D. W. E. Allsopp
Nov 07, 2014
Cathodoluminescence (CL) hyperspectral imaging has been performed on GaN nanorods containing a single InGaN quantum disk (SQD) with controlled variations in excitation conditions. Two different nanorod diameters (200 and 280...
Enhanced light extraction by photonic quasi-crystals in GaN blue LEDs
Philip A. Shields, Martin D. B. Charlton, Tom Lee, Majd E. Zoorob, Duncan W. E. Allsopp, Wang Nang Wang
Jul 01, 2009
The far-field profile of photonic quasi-crystal patterned and unpatterned LEDs, fabricated from commercial epitaxial substrates by electron beam lithography, has been measured prior to lapping and dicing. Emission enhancements...
Waveguide integrated GaN distributed Bragg reflector cavity using low-cost nanolithography
Simeng Jia, Emmanuel D. Le Boulbar, Krishna C. Balram, Jon R. Pugh, Tao Wang, Duncan W.E. Allsopp, Philip A. Shields, Martin J. Cryan
Nov 20, 2019
This work presents the design, fabrication and measurement of gallium nitride (GaN) distributed Bragg reflector cavities integrated with input and output grating couplers. The devices are fabricated using a new, low-cost...
Waveguide integrated GaN distributed Bragg reflector cavity using low-cost nanolithography
Simeng Jia, Emmanuel D. Le Boulbar, Krishna C. Balram, Jon R. Pugh, Tao Wang, Duncan W.E. Allsopp, Philip A. Shields, Martin J. Cryan
Nov 20, 2019
This work presents the design, fabrication and measurement of gallium nitride (GaN) distributed Bragg reflector cavities integrated with input and output grating couplers. The devices are fabricated using a new, low-cost...
Facet recovery and light emission from GaN/InGaN/GaN core-shell structures grown by metal organic vapour phase epitaxy on etched GaN nanorod arrays
E. D. Le Boulbar, Ionut Girgel, C. J. Lewins, P. R. Edwards, R. W. Martin, A. Šatka, D. W. E. Allsopp, P. A. Shields
Sep 03, 2013
The use of etched nanorods from a planar template as a growth scaffold for a highly regular GaN/InGaN/GaN core-shell structure is demonstrated. The recovery of m-plane non-polar facets from etched high-aspect-ratio GaN nanorods...
|
|< |
< |
1 |